Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam epitaxy

S. F. Chichibu*, T. Sota, P. J. Fons, K. Iwata, A. Yamada, K. Matsubara, S. Niki

*この研究の対応する著者

研究成果: Conference article査読

5 被引用数 (Scopus)

抄録

Exciton-polariton structures were observed at 8 K in the photoreflectance (PR) and resonantly excited photoluminescence (PL) spectra of a ZnO (0001) epitaxial film on the a-face of sapphire grown by radical-source molecular-beam epitaxy. The resonance energies of near-normal predominant PR structures were close to those of the longitudinal excitons, i.e. upper polariton branches, where A-, B-, and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, the longitudinal-transverse (L-T) splitting of the B-excitonic polariton was observed, which is due to the large oscillator strength. The sample quality was high enough to observe distinct excitonic polariton emissions.

本文言語English
ページ(範囲)171-176
ページ数6
ジャーナルPhysica Status Solidi (A) Applied Research
192
1
DOI
出版ステータスPublished - 2002 7月
イベント4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain
継続期間: 2002 3月 112002 3月 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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