Exciton-polariton structures were observed at 8 K in the photoreflectance (PR) and resonantly excited photoluminescence (PL) spectra of a ZnO (0001) epitaxial film on the a-face of sapphire grown by radical-source molecular-beam epitaxy. The resonance energies of near-normal predominant PR structures were close to those of the longitudinal excitons, i.e. upper polariton branches, where A-, B-, and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, the longitudinal-transverse (L-T) splitting of the B-excitonic polariton was observed, which is due to the large oscillator strength. The sample quality was high enough to observe distinct excitonic polariton emissions.
|ジャーナル||Physica Status Solidi (A) Applied Research|
|出版ステータス||Published - 2002 7月|
|イベント||4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain|
継続期間: 2002 3月 11 → 2002 3月 15
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