Physical and chemical analytical instruments for failure analyses in G-bit devices

Yasuhiro Mitsui; Fumiko Yano; Yoshitaka Nakamura; Koji Kimoto; Tsuyoshi Hasegawa; Shigeharu Kimura; Kyoichiro Asayama

Physical and chemical analytical instruments for failure analyses in G-bit devices

Yasuhiro Mitsui^*, Fumiko Yano, Yoshitaka Nakamura, Koji Kimoto, Tsuyoshi Hasegawa, Shigeharu Kimura, Kyoichiro Asayama

^*この研究の対応する著者

研究成果: Conference article › 査読

15 被引用数 (Scopus)

抄録

The current status and future trend of analytical instruments are discussed. Analytical instruments for failure analyses in sub-1/4 micron dimensions or less, require high spatial resolution and sensitivity at atomic levels. Using new analytical instruments, such as the Nano-prober for electrical characteristics inspection in actual circuits, TEM-EELS for chemical bond analysis of nanometer area and GDS for precise composition analysis, it was found that a SiO₂ or TiO_x film formed by water from titanic acid (TiO_xH₂O) produced with titan, water and chlorine, was a cause of high resistivity for a contact (CVD-W/CVD-TiN/Ti/Si) in sub-1/4 micron devices.

本文言語	English
ページ（範囲）	329-332
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting
出版ステータス	Published - 1998
外部発表	はい
イベント	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA 継続期間: 1998 12月 6 → 1998 12月 9

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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title = "Physical and chemical analytical instruments for failure analyses in G-bit devices",

abstract = "The current status and future trend of analytical instruments are discussed. Analytical instruments for failure analyses in sub-1/4 micron dimensions or less, require high spatial resolution and sensitivity at atomic levels. Using new analytical instruments, such as the Nano-prober for electrical characteristics inspection in actual circuits, TEM-EELS for chemical bond analysis of nanometer area and GDS for precise composition analysis, it was found that a SiO2 or TiOx film formed by water from titanic acid (TiOxH2O) produced with titan, water and chlorine, was a cause of high resistivity for a contact (CVD-W/CVD-TiN/Ti/Si) in sub-1/4 micron devices.",

author = "Yasuhiro Mitsui and Fumiko Yano and Yoshitaka Nakamura and Koji Kimoto and Tsuyoshi Hasegawa and Shigeharu Kimura and Kyoichiro Asayama",

year = "1998",

language = "English",

pages = "329--332",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

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TY - JOUR

T1 - Physical and chemical analytical instruments for failure analyses in G-bit devices

AU - Mitsui, Yasuhiro

AU - Yano, Fumiko

AU - Nakamura, Yoshitaka

AU - Kimoto, Koji

AU - Hasegawa, Tsuyoshi

AU - Kimura, Shigeharu

AU - Asayama, Kyoichiro

PY - 1998

Y1 - 1998

N2 - The current status and future trend of analytical instruments are discussed. Analytical instruments for failure analyses in sub-1/4 micron dimensions or less, require high spatial resolution and sensitivity at atomic levels. Using new analytical instruments, such as the Nano-prober for electrical characteristics inspection in actual circuits, TEM-EELS for chemical bond analysis of nanometer area and GDS for precise composition analysis, it was found that a SiO2 or TiOx film formed by water from titanic acid (TiOxH2O) produced with titan, water and chlorine, was a cause of high resistivity for a contact (CVD-W/CVD-TiN/Ti/Si) in sub-1/4 micron devices.

AB - The current status and future trend of analytical instruments are discussed. Analytical instruments for failure analyses in sub-1/4 micron dimensions or less, require high spatial resolution and sensitivity at atomic levels. Using new analytical instruments, such as the Nano-prober for electrical characteristics inspection in actual circuits, TEM-EELS for chemical bond analysis of nanometer area and GDS for precise composition analysis, it was found that a SiO2 or TiOx film formed by water from titanic acid (TiOxH2O) produced with titan, water and chlorine, was a cause of high resistivity for a contact (CVD-W/CVD-TiN/Ti/Si) in sub-1/4 micron devices.

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M3 - Conference article

AN - SCOPUS:0032265854

SN - 0163-1918

SP - 329

EP - 332

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

Physical and chemical analytical instruments for failure analyses in G-bit devices

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