Picosecond absorption recovery of 100 nm GaAs/AlGaAs MQW wires

Atsushi Tackeuchi*, Hideki Kitada, Hiroshi Arimoto, Yoshihiro Sugiyama, Tsuguo Inata, Yasuhiro Yamaguchi, Yoshiaki Nakata, Satoshi Nakamura, Shunichi Muto

*この研究の対応する著者

研究成果: Article査読

抄録

We have studied narrow multiple quantum-well (MQW) wires using conventional absorption spectroscopy and time-resolved absorption measurements. Wires down to 130 nm were fabricated from MQW's using focused ion-beam lithography and electron cyclotron-resonance chlorine-plasma etching. In this structure, the photoexcited carriers diffuse toward sidewalls and recombine on the sidewall surface. We confirmed from the absorption spectrum of MQW wires that the exciton peak is preserved even in wires 130 nm wide. We show that the excitonic absorption recovery of MQW wires is reduced to 11 ps, preserving excitonic optical nonlinearity.

本文言語English
ページ(範囲)267-269
ページ数3
ジャーナルSurface Science
267
1-3
DOI
出版ステータスPublished - 1992
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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