Picosecond carrier recombination of single-crystalline GaN nanorods grown on Si(111) substrates

Atsushi Tackeuchi*, Chan Ho Yoo, Tae Whan Kim, Young Hae Kwon, Tae Won Kang, Takao Nukui, Taisuke Fujita, Yoshiaki Nakazato, Yu Saeki, Sotaro Izumi

*この研究の対応する著者

研究成果: Article査読

抄録

Time-resolved photoluminescence measurement was performed on one-dimensional GaN nanorods with c-axis-oriented single-crystalline wurtzite structures. The GaN nanorods were grown on Si(111) substrates by an improved hydride vapor phase epitaxy without a catalyst. Fast carrier recombinations of less than 10 ps were observed. The short recombination times of the GaN nanorods with few defects show the presence of nonradiative fast recombinations at the surface and interface.

本文言語English
ページ(範囲)702011-702013
ページ数3
ジャーナルJapanese journal of applied physics
49
7 PART 1
DOI
出版ステータスPublished - 2010 7 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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