Picosecond characterization of InGaAs/InAlAs resonant tunneling barrier diode by electro-optic sampling

Atsushi Tackeuchi, Tsuguo Inata, Shunichi Muto, Eizo Miyauchi

研究成果: Article査読

13 被引用数 (Scopus)

抄録

We have studied the dynamic response of the InGaAs/InAlAs resonant tunneling barrier (RTB) diode using electro-optic sampling. We have confirmed that the switching time decreases with the barrier thickness. We propose an equivalent circuit model of the RTB diode to phenomenologically treat the “state-lifetime”, that is, the quantum mechanical lifetime of the resonant-state formed in the quantum well. Using this model, we have found that the experimental state-lifetime is smaller than its calculated value in the unbiased condition.

本文言語English
ページ(範囲)L750-L753
ジャーナルJapanese journal of applied physics
28
5A
DOI
出版ステータスPublished - 1989 5月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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