We observed the dynamic response of InGaAs/InAlAs resonant tunneling barrier diodes using electro-optic sampling. We simulated the observed waveforms using an equivalent circuit model to evaluate the negative differential resistance of the diodes. We showed that the RC time constant of the diode in the negative differential resistance region is reduced by lowering the doping concentration in the barrier's emitter layer. Also, a femtosecond RC is estimated for an InGaAs/AlAs resonant tunneling barrier with a high peak current density of 105A/cm2.
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