Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells

Atsushi Tackeuchi, Takamasa Kuroda, Shunichi Muto, Osamu Wada

研究成果: Conference article査読

20 被引用数 (Scopus)

抄録

The spin-relaxation process of electrons at room temperature is investigated for GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for various well thicknesses using time-resolved spin-dependent pump and probe absorption measurements. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs∝E1e-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured τs of InGaAs MQWs vary depending on the quantum confinement energy, E1e, according to τs∝E1e-1.0·τs for QWs by the Elliott-Yafet process is calculated and shown to vary according to τs∝E1e-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.

本文言語English
ページ(範囲)318-323
ページ数6
ジャーナルPhysica B: Condensed Matter
272
1-4
DOI
出版ステータスPublished - 1999 12 1
イベントProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
継続期間: 1999 7 191999 7 23

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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