Picosecond signal recovery in type II tunneling bi-quantum well etalon

Atsushi Tackeuchi, Tsuguo Inata, Yoshiaki Nakata, Satoshi Nakamura, Yoshihiro Sugiyama, Shunichi Muto

研究成果: Article

9 引用 (Scopus)

抄録

We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. The type II TBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. In this structure, photoexcited electrons in the GaAs wells escape by tunneling through the AlGaAs barriers toward X states in the AlAs layers. Therefore, the time for recovery from excitonic absorption bleaching in GaAs wells is controlled directly by the AlGaAs barrier thickness. The type II TBQ etalon with 1.7 nm barriers showed a fast signal recovery of 17 ps by carrier tunneling.

元の言語English
ページ(範囲)1892-1894
ページ数3
ジャーナルApplied Physics Letters
61
発行部数16
DOI
出版物ステータスPublished - 1992
外部発表Yes

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recovery
quantum wells
aluminum gallium arsenides
bleaching
escape
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Tackeuchi, A., Inata, T., Nakata, Y., Nakamura, S., Sugiyama, Y., & Muto, S. (1992). Picosecond signal recovery in type II tunneling bi-quantum well etalon. Applied Physics Letters, 61(16), 1892-1894. https://doi.org/10.1063/1.108380

Picosecond signal recovery in type II tunneling bi-quantum well etalon. / Tackeuchi, Atsushi; Inata, Tsuguo; Nakata, Yoshiaki; Nakamura, Satoshi; Sugiyama, Yoshihiro; Muto, Shunichi.

:: Applied Physics Letters, 巻 61, 番号 16, 1992, p. 1892-1894.

研究成果: Article

Tackeuchi, A, Inata, T, Nakata, Y, Nakamura, S, Sugiyama, Y & Muto, S 1992, 'Picosecond signal recovery in type II tunneling bi-quantum well etalon', Applied Physics Letters, 巻. 61, 番号 16, pp. 1892-1894. https://doi.org/10.1063/1.108380
Tackeuchi, Atsushi ; Inata, Tsuguo ; Nakata, Yoshiaki ; Nakamura, Satoshi ; Sugiyama, Yoshihiro ; Muto, Shunichi. / Picosecond signal recovery in type II tunneling bi-quantum well etalon. :: Applied Physics Letters. 1992 ; 巻 61, 番号 16. pp. 1892-1894.
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