Picosecond signal recovery in type II tunneling bi-quantum well etalon

Atsushi Tackeuchi, Tsuguo Inata, Yoshiaki Nakata, Satoshi Nakamura, Yoshihiro Sugiyama, Shunichi Muto

研究成果: Article査読

10 被引用数 (Scopus)

抄録

We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. The type II TBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. In this structure, photoexcited electrons in the GaAs wells escape by tunneling through the AlGaAs barriers toward X states in the AlAs layers. Therefore, the time for recovery from excitonic absorption bleaching in GaAs wells is controlled directly by the AlGaAs barrier thickness. The type II TBQ etalon with 1.7 nm barriers showed a fast signal recovery of 17 ps by carrier tunneling.

本文言語English
ページ(範囲)1892-1894
ページ数3
ジャーナルApplied Physics Letters
61
16
DOI
出版ステータスPublished - 1992
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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