Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation

Atsushi Tackeuchi, Tsuguo Inata, Yoshiaki Nakata, Satoshi Nakamura, Yoshihiro Sugiyama, Shunichi Muto

研究成果: Conference article

抜粋

We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. Type IITBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. The recovery time from excitonic absorption bleaching in GaAs wells is governed by tunneling of electrons out of the well through AlGaAs barriers into AlAs layers. The type-II TBQ etalon with 1.7 nm barriers shows 17 ps-recovery.

元の言語English
ページ(範囲)60-63
ページ数4
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
1985
DOI
出版物ステータスPublished - 1993
外部発表Yes
イベントPhysical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy
継続期間: 1993 5 231993 5 28

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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