抜粋
We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. Type IITBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. The recovery time from excitonic absorption bleaching in GaAs wells is governed by tunneling of electrons out of the well through AlGaAs barriers into AlAs layers. The type-II TBQ etalon with 1.7 nm barriers shows 17 ps-recovery.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 60-63 |
| ページ数 | 4 |
| ジャーナル | Proceedings of SPIE - The International Society for Optical Engineering |
| 巻 | 1985 |
| DOI | |
| 出版物ステータス | Published - 1993 |
| 外部発表 | Yes |
| イベント | Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy 継続期間: 1993 5 23 → 1993 5 28 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
フィンガープリント Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Tackeuchi, A., Inata, T., Nakata, Y., Nakamura, S., Sugiyama, Y., & Muto, S. (1993). Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation. Proceedings of SPIE - The International Society for Optical Engineering, 1985, 60-63. https://doi.org/10.1117/12.162795