TY - JOUR
T1 - Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation
AU - Tackeuchi, Atsushi
AU - Inata, Tsuguo
AU - Nakata, Yoshiaki
AU - Nakamura, Satoshi
AU - Sugiyama, Yoshihiro
AU - Muto, Shunichi
N1 - Publisher Copyright:
© 1993 SPIE. All rights reserved.
PY - 1993
Y1 - 1993
N2 - We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. Type IITBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. The recovery time from excitonic absorption bleaching in GaAs wells is governed by tunneling of electrons out of the well through AlGaAs barriers into AlAs layers. The type-II TBQ etalon with 1.7 nm barriers shows 17 ps-recovery.
AB - We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. Type IITBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. The recovery time from excitonic absorption bleaching in GaAs wells is governed by tunneling of electrons out of the well through AlGaAs barriers into AlAs layers. The type-II TBQ etalon with 1.7 nm barriers shows 17 ps-recovery.
UR - http://www.scopus.com/inward/record.url?scp=85075886933&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85075886933&partnerID=8YFLogxK
U2 - 10.1117/12.162795
DO - 10.1117/12.162795
M3 - Conference article
AN - SCOPUS:85075886933
VL - 1985
SP - 60
EP - 63
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
T2 - Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993
Y2 - 23 May 1993 through 28 May 1993
ER -