Planar-Doping of Molecular Beam Epitaxy Grown Znse With Plasma-Excited Nitrogen

Shigeyuki Matsumoto, Hiroyuki Tosaka, Takashi Yoshida, Masakazu Kobayashi, Akihiko Yoshikawa

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Planar doping of nitrogen into ZnSe is examined. The dependence of doping efficiency on the particular surface termination (Zn- or Se-stabilised) on (100) ZnSe is investigated through capacitance-voltage measurement and low-temperature photoluminescence (PL) spectroscopy. Using planar doping on the Zn surface, we achieved a hole concentration of 4.5 x 1017 cm-3, and the PL spectrum is dominated by strong donor-acceptor pair (DAP) emissions. By contrast, the film planar-doped on the Se plane shows rather low hole concentration, and the spectrum is dominated by excitonic features along with very weak DAP emissions.

本文言語English
ページ(範囲)L229-L232
ジャーナルJapanese journal of applied physics
32
2 B
DOI
出版ステータスPublished - 1993 2
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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