Planar doping of nitrogen into ZnSe is examined. The dependence of doping efficiency on the particular surface termination (Zn- or Se-stabilised) on (100) ZnSe is investigated through capacitance-voltage measurement and low-temperature photoluminescence (PL) spectroscopy. Using planar doping on the Zn surface, we achieved a hole concentration of 4.5 x 1017 cm-3, and the PL spectrum is dominated by strong donor-acceptor pair (DAP) emissions. By contrast, the film planar-doped on the Se plane shows rather low hole concentration, and the spectrum is dominated by excitonic features along with very weak DAP emissions.
ASJC Scopus subject areas