Plasma-enhanced diamond nucleation on Si

Masahiro Katoh, Makoto Aoki, Hiroshi Kawarada

研究成果: Article査読

36 被引用数 (Scopus)

抄録

Both positive and negative bias effects on the nucleation of chemical vapor deposition (CVD) diamond have been investigated thoroughly in microwave plasma. Prior to the conventional microwave plasma CVD growth of diamond, positive or negative biasing pretreatment has been performed. The pretreatment conditions were varied in terms of substrate bias voltage (—100~ + 100 V), pretreatment pressure (0.2~15 Torr), and methane fraction (2 ~40%) in hydrogen source gas. It is found that the positive substrate bias as well as the negative bias are effective for the nucleation of diamond.

本文言語English
ページ(範囲)L194-L196
ジャーナルJapanese journal of applied physics
33
2A
DOI
出版ステータスPublished - 1994 2

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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