Pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors with low-base-resistance (< 100 Ω/square)

Kazuhide Kumakura*, Toshiki Makimoto

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We investigated the current-voltage characteristics of pnp AlGaN/InGaN/GaN double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy. The InGaN base layer was heavily doped with Si in the range from 4 × 1019 o 2 × 1020 cm-3. Base sheet resistance was less than 100Ω/square for the base width of 30 nm and Si-doping concentration of 2 × 10cm-3. This is the lowest resistance ever reported for nitride-based heterojunction bipolar transistors. In this device, the current gain was 2.7 at the collector current of 23 mA. We observed no significant degradation in the crystal quality of InGaN in separate Hall-effect measurements of Si-doped InGaN and in the device operation, even though the Si-doping concentration was above 1020 cm-3. The capability to decrease the base resistance will be advantageous for high-frequency operation.

本文言語English
ページ(範囲)2338-2340
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
4 B
DOI
出版ステータスPublished - 2007 4月 24
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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