Polarization charge densities at p-GaN/n-AlGaN heterojunctions evaluated by capacitance-voltage characteristics

T. Makimoto*, K. Kumakura, N. Kobayashi

*この研究の対応する著者

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

We propose a new method to evaluate the polarization charge density induced at hetero-interfaces using capacitance-voltage characteristics of p-n heterojunctions and have applied this method to p-GaN/n-AlGaN heterojunction diodes. This method uses p-n heterojunction structures instead of undoped ones, so the obtained result is less influenced by background impurities or deep levels. Furthermore, it is possible to evaluate the negative polarization charge densities for GaN on top of AlGaN heterostructures. The experimental results indicate that the negative polarization charges with their densities more than 5 × 1012 cm-2 are induced at the GaN/AlGaN hetero-interfaces for the Al mole fractions above 11%.

本文言語English
ページ(範囲)334-337
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
1
DOI
出版ステータスPublished - 2002 12 1
外部発表はい
イベント2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
継続期間: 2002 7 222002 7 25

ASJC Scopus subject areas

  • 凝縮系物理学

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