抄録
Current and wavelength characteristics for 1.55-μm semiconductor optical amplifiers (SOAs) containing bulk active layers with various tensile strains were investigated. The strain dependence of the gain-difference between TE-mode and TM-mode (ΔG TE-TM) was almost linear having the waveguide-width over 0.8-1.5 μm. A -0.12% tensile-strained bulk SOA had very low ΔG TE-TM of less than 0.8 dB ranging the driving current from 0 to 120 mA. The low-polarization-sensitive condition of SOA with a strained-bulk active layer was shown to have very wide range in driving current and wavelength for the network device application.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 765-767 |
| ページ数 | 3 |
| ジャーナル | IEEE Photonics Technology Letters |
| 巻 | 14 |
| 号 | 6 |
| DOI | |
| 出版ステータス | Published - 2002 6月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 原子分子物理学および光学
- 電子工学および電気工学