Polarization-insensitive SOA with a strained bulk active layer for network device application

Masayuki Itoh*, Yasuo Shibata, Takaaki Kakitsuka, Yoshiaki Kadota, Yuichi Tohmori

*この研究の対応する著者

研究成果: Article査読

15 被引用数 (Scopus)

抄録

Current and wavelength characteristics for 1.55-μm semiconductor optical amplifiers (SOAs) containing bulk active layers with various tensile strains were investigated. The strain dependence of the gain-difference between TE-mode and TM-mode (ΔG TE-TM) was almost linear having the waveguide-width over 0.8-1.5 μm. A -0.12% tensile-strained bulk SOA had very low ΔG TE-TM of less than 0.8 dB ranging the driving current from 0 to 120 mA. The low-polarization-sensitive condition of SOA with a strained-bulk active layer was shown to have very wide range in driving current and wavelength for the network device application.

本文言語English
ページ(範囲)765-767
ページ数3
ジャーナルIEEE Photonics Technology Letters
14
6
DOI
出版ステータスPublished - 2002 6 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 電子工学および電気工学

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