Polarization-inverted multilayered pure shear mode AlN film resonator

Masashi Suzuki, Takahiko Yanagitani

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

c-axis parallel AlN film is suitable for pure shear mode devices. Polarization-inverted multilayered structure can excite high order mode resonance. The film thickness of high order mode resonator is thicker than that of fundamental mode resonator in same operating frequency. Therefore, the multilayered resonator is expected to have high power handling capability. c-axis parallel polarization-inverted multilayered AlN films were fabricated by ion beam assisted deposition (IBAD). caxis parallel orientation was formed under the 3 kV accelerated ion beam irradiation. Shear mode resonator was prepared to investigate piezoelectric properties of the film. Only pure shear wave without any longitudinal wave was excited in the resonators. k15 was determined to be 0.05 and this value is 71 % of the single crystalline AlN. We considered that in-plane crystal growth direction should to be determined by the ion beam irradiation direction. c-axis parallel multilayer AlN film was fabricated by inverting in-plane beam irradiation direction. High order mode resonance was observed in the resonators, showing that polarization was inverted in the multilayer AlN films.

本文言語English
ホスト出版物のタイトル2011 IEEE International Ultrasonics Symposium, IUS 2011
ページ312-315
ページ数4
DOI
出版ステータスPublished - 2011 12 1
外部発表はい
イベント2011 IEEE International Ultrasonics Symposium, IUS 2011 - Orlando, FL, United States
継続期間: 2011 10 182011 10 21

出版物シリーズ

名前IEEE International Ultrasonics Symposium, IUS
ISSN(印刷版)1948-5719
ISSN(電子版)1948-5727

Other

Other2011 IEEE International Ultrasonics Symposium, IUS 2011
CountryUnited States
CityOrlando, FL
Period11/10/1811/10/21

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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