We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-To-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) (001) textured Co2Fe(Ga0.5Ge0.5) (CFGG) ferromagnetic layers grown on a conductive (Mg0.5Ti0.5)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400 °C shows a resistance change-Area (δRA) product of 6.6 m μm2. Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a (001) textured Heusler-Alloy-based CPP-GMR device.
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