Polysilicon Thin-Film Transistors with Channel Length and Width Comparable to or Smaller than the Grain Size of the Thin Film

Noriyoshi Yamauchi*, Jean Jacques J. Hajjar, Rafael Reif

*この研究の対応する著者

研究成果: Article査読

113 被引用数 (Scopus)

抄録

Poly-Si thin-film transistors with channel dimensions (width, W, and length, L) comparable to or smaller than the grain size of the poly-Si film were fabricated and characterized. The grain size of the poly-Si film was enhanced by Si ion implantation followed by a low-temperature anneal and was typically 1 to 3 μm in diameter. A remarkable improvement was observed in the device characteristics as the channel dimensions decreased to W = L = 2 μm. On the other hand, TFT's with submicrometer channel dimensions were characterized by an extremely abrupt switching in their ID versus VGS characteristics. The improvement was attributed to a reduction in the effect of the grain boundaries and to the effect of the device's floating body.

本文言語English
ページ(範囲)55-60
ページ数6
ジャーナルIEEE Transactions on Electron Devices
38
1
DOI
出版ステータスPublished - 1991 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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