Positron beam study of defects in SiO 2

M. Fujinami, N. B. Chilton, K. Ishii, Yoshimichi Ohki

研究成果: Chapter

2 引用 (Scopus)

抄録

Defects in crystalline and amorphous SiO 2 were studied by variable-energy positron annihilation spectroscopy in an attempt to clarify what defects in SiO 2 are observable in positron annihilation studies. The level of the S parameter in amorphous SiO 2 films grown by plasma chemical vapor deposition (CVD) in a tetraethylorthosilicate (TEOS) and O 2 atmosphere was found to be correlated to the concentration of Si-OH in the silicon dioxide layer. The difference in S parameter between crystalline and amorphous SiO 2 is assumed to be due to the effects of para-Ps self-annihilation in free volumes in the amorphous sample. The S parameters in crystalline and thermally grown silicon dioxide were both found to decrease after C ion implantation (1×10 14 cm -2, 140 keV) or alternatively, ArF excimer laser (6.4 eV) irradiation. Both methods are expected to produce numerous types of Frenkel defects of which, it is most likely that negatively charged species such as ≡Si-O - are the trapping sites. In the case of ion implantation into amorphous SiO 2 a greatly lowered S parameter is observed, this is explained as a combination of defect trapping and reduction in para Ps production after ion implantation.

元の言語English
ホスト出版物のタイトルJournal De Physique. IV : JP
編集者I. Billard
出版者Publ by Editions de Physique
ページ169-175
ページ数7
3
エディション4
出版物ステータスPublished - 1993 9
外部発表Yes
イベントProceedings of the 4th International Workshop on Positron and Positronium Chemistry - Le Mont Sainte-Odile, Fr
継続期間: 1993 6 201993 6 24

Other

OtherProceedings of the 4th International Workshop on Positron and Positronium Chemistry
Le Mont Sainte-Odile, Fr
期間93/6/2093/6/24

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positrons
ion implantation
defects
positron annihilation
trapping
silicon dioxide
Frenkel defects
excimer lasers
vapor deposition
atmospheres
irradiation
spectroscopy
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

これを引用

Fujinami, M., Chilton, N. B., Ishii, K., & Ohki, Y. (1993). Positron beam study of defects in SiO 2 : I. Billard (版), Journal De Physique. IV : JP (4 版, 巻 3, pp. 169-175). Publ by Editions de Physique.

Positron beam study of defects in SiO 2 . / Fujinami, M.; Chilton, N. B.; Ishii, K.; Ohki, Yoshimichi.

Journal De Physique. IV : JP. 版 / I. Billard. 巻 3 4. 編 Publ by Editions de Physique, 1993. p. 169-175.

研究成果: Chapter

Fujinami, M, Chilton, NB, Ishii, K & Ohki, Y 1993, Positron beam study of defects in SiO 2 : I Billard (版), Journal De Physique. IV : JP. 4 Edn, 巻. 3, Publ by Editions de Physique, pp. 169-175, Proceedings of the 4th International Workshop on Positron and Positronium Chemistry, Le Mont Sainte-Odile, Fr, 93/6/20.
Fujinami M, Chilton NB, Ishii K, Ohki Y. Positron beam study of defects in SiO 2 : Billard I, 編集者, Journal De Physique. IV : JP. 4 版 巻 3. Publ by Editions de Physique. 1993. p. 169-175
Fujinami, M. ; Chilton, N. B. ; Ishii, K. ; Ohki, Yoshimichi. / Positron beam study of defects in SiO 2 Journal De Physique. IV : JP. 編集者 / I. Billard. 巻 3 4. 版 Publ by Editions de Physique, 1993. pp. 169-175
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