Possibilities of electron beam nano-meter-scale fabrication of Si(111) using alkyl monolayers

Taro Yamada*, Nao Takano, Keiko Yamada, Shuhei Yoshitomi, Tomoyuki Inoue, Tetsuya Osaka

*この研究の対応する著者

研究成果: Conference contribution

抄録

A novel process of electron-beam nanometer-scale fabrication on Si(III) wafer surfaces has been proposed on the basis of application of organic monolayers as the ultimately thin patterning media. The monolayers on Si(III) wafer surfaces composed of alkyl groups (CnH2n+1-) prepared with the Grignard reagents were subjected to electron-beam patterning, and deposition of metals onto the electron-bombarded patterns by immersion into aqueous solutions containing Ni2+ or Cu2+ ions. This entire process has been put into practice successfully as a benchmark test. The strength of alkyl-covered Si(III) surface against the processing environment such as in vacuum and aqueous solutions has been demonstrated.

本文言語English
ホスト出版物のタイトルProceedings of the IEEE Conference on Nanotechnology
出版社IEEE Computer Society
ページ403-408
ページ数6
2001-January
ISBN(印刷版)0780372158
DOI
出版ステータスPublished - 2001
イベント1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 - Maui, United States
継続期間: 2001 10 282001 10 30

Other

Other1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
国/地域United States
CityMaui
Period01/10/2801/10/30

ASJC Scopus subject areas

  • バイオエンジニアリング
  • 電子工学および電気工学
  • 材料化学
  • 凝縮系物理学

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