Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

Muneyuki Naito; Akihiko Hirata; Manabu Ishimaru; Yoshihiko Hirotsu

doi:10.1016/j.nimb.2007.01.023

Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

Muneyuki Naito, Akihiko Hirata, Manabu Ishimaru, Yoshihiko Hirotsu

研究成果: Article › 査読

抄録

We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 × 10¹⁷ and 4.0 × 10¹⁷ cm^-2. A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi₂ fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi₂ layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si.

本文言語	English
ページ（範囲）	340-343
ページ数	4
ジャーナル	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
巻	257
号	1-2 SPEC. ISS.
DOI	https://doi.org/10.1016/j.nimb.2007.01.023
出版ステータス	Published - 2007 4
外部発表	はい

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

文献へのアクセス

10.1016/j.nimb.2007.01.023

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引用スタイル

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title = "Post-annealing recrystallization and damage recovery process in Fe ion implanted Si",

abstract = "We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 × 1017 and 4.0 × 1017 cm-2. A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si.",

keywords = "EELS mapping, Ion implantation, Iron silicides, Solid phase crystallization",

author = "Muneyuki Naito and Akihiko Hirata and Manabu Ishimaru and Yoshihiko Hirotsu",

note = "Funding Information: We thank Dr. K.E. Sickafus and J.A. Valdez for providing us with the samples. This work was partly supported by the 21st Century Center of Excellence (COE) program, Grant-in-Aid for Scientific Research, and the Hosokawa Powder Technology Foundation. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2007",

month = apr,

doi = "10.1016/j.nimb.2007.01.023",

language = "English",

volume = "257",

pages = "340--343",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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T1 - Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

AU - Naito, Muneyuki

AU - Hirata, Akihiko

AU - Ishimaru, Manabu

AU - Hirotsu, Yoshihiko

N1 - Funding Information: We thank Dr. K.E. Sickafus and J.A. Valdez for providing us with the samples. This work was partly supported by the 21st Century Center of Excellence (COE) program, Grant-in-Aid for Scientific Research, and the Hosokawa Powder Technology Foundation. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007/4

Y1 - 2007/4

N2 - We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 × 1017 and 4.0 × 1017 cm-2. A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si.

AB - We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 × 1017 and 4.0 × 1017 cm-2. A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si.

KW - EELS mapping

KW - Ion implantation

KW - Iron silicides

KW - Solid phase crystallization

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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