Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

Muneyuki Naito, Akihiko Hirata, Manabu Ishimaru, Yoshihiko Hirotsu

研究成果: Article査読


We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 × 1017 and 4.0 × 1017 cm-2. A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si.

ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
1-2 SPEC. ISS.
出版ステータスPublished - 2007 4

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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