Post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

J. Senzaki, K. Fukuda, S. Imai, Y. Tanaka, Naoto Kobayashi, H. Tanoue, H. Okushi, K. Arai

研究成果: Article

11 引用 (Scopus)

抄録

High-temperature ion implantation of arsenic (As+) into the 4H-silicon carbide (SiC) substrates with high dose of 7×1015 cm-2 has been investigated as an effective doping method of n-type dopant for SiC power electron devices fabrication. Regardless of the ion implantation temperature, the sheet resistances (Rs) decrease below 1600 °C post-annealing and increase above 1700 °C as the post-annealing temperature increases. The specified low Rs value is achieved in the sample implanted at 500 °C and annealed at 1600 °C, an order of magnitude smaller than that implanted at room temperature (RT). Atomic force microscopy (AFM) images reveal that the surface roughness of ion-implanted SiC increases with the increase of post-annealing temperature. Secondary ion mass spectroscopy (SIMS) results show that As+ dopant depth profiles of the sample implanted at 500 °C do not change before and after the post-annealing. On the other hand, for the sample implanted at RT, the As+ concentration in the ion-implanted layer decreases due to the outer-diffusion. These results indicate that high-temperature ion implantation is an effective method to prevent the outer-diffusion of As+ dopants during high-temperature post-annealing. It is considered that these post-annealing temperature dependences are caused by the evaporation of SiC surface layer.

元の言語English
ページ(範囲)544-549
ページ数6
ジャーナルApplied Surface Science
159
DOI
出版物ステータスPublished - 2000 6
外部発表Yes

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Arsenic
arsenic
Silicon carbide
silicon carbides
Surface morphology
Electric properties
electrical properties
Annealing
Ions
temperature dependence
annealing
ion implantation
ions
Doping (additives)
Ion implantation
Temperature
low resistance
room temperature
temperature
Electron devices

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

これを引用

Post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature. / Senzaki, J.; Fukuda, K.; Imai, S.; Tanaka, Y.; Kobayashi, Naoto; Tanoue, H.; Okushi, H.; Arai, K.

:: Applied Surface Science, 巻 159, 06.2000, p. 544-549.

研究成果: Article

Senzaki, J. ; Fukuda, K. ; Imai, S. ; Tanaka, Y. ; Kobayashi, Naoto ; Tanoue, H. ; Okushi, H. ; Arai, K. / Post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature. :: Applied Surface Science. 2000 ; 巻 159. pp. 544-549.
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abstract = "High-temperature ion implantation of arsenic (As+) into the 4H-silicon carbide (SiC) substrates with high dose of 7×1015 cm-2 has been investigated as an effective doping method of n-type dopant for SiC power electron devices fabrication. Regardless of the ion implantation temperature, the sheet resistances (Rs) decrease below 1600 °C post-annealing and increase above 1700 °C as the post-annealing temperature increases. The specified low Rs value is achieved in the sample implanted at 500 °C and annealed at 1600 °C, an order of magnitude smaller than that implanted at room temperature (RT). Atomic force microscopy (AFM) images reveal that the surface roughness of ion-implanted SiC increases with the increase of post-annealing temperature. Secondary ion mass spectroscopy (SIMS) results show that As+ dopant depth profiles of the sample implanted at 500 °C do not change before and after the post-annealing. On the other hand, for the sample implanted at RT, the As+ concentration in the ion-implanted layer decreases due to the outer-diffusion. These results indicate that high-temperature ion implantation is an effective method to prevent the outer-diffusion of As+ dopants during high-temperature post-annealing. It is considered that these post-annealing temperature dependences are caused by the evaporation of SiC surface layer.",
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AU - Okushi, H.

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