Potential applications of surface channel diamond field-effect transistors

Hitoshi Umezawa*, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

31 被引用数 (Scopus)

抄録

In order to realize high frequency and high power diamond devices, diamond FETs on the hydrogen-terminated diamond surface conductive layer have been fabricated. The fabricated diamond MESFETs show high breakdown voltage and output capability of 1 W mm-1. High transconductance diamond MESFET utilizing a self-aligned gate FET fabrication process has been operated in high frequency for the first time. In the 2 μm gate MESFETs, the obtained cut off frequency fT and maximum frequency of oscillation fmax are 2.2 and 7 GHz, respectively. It is expected that the diamond MESFET with 0.5 μm gate length fabricated by self-aligned gate process shows 8 GHz of fT and 30 GHz of fmax.

本文言語English
ページ(範囲)1743-1748
ページ数6
ジャーナルDiamond and Related Materials
10
9-10
DOI
出版ステータスPublished - 2001 9月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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