Potential energy landscape of an interstitial O2 molecule in a SiO2 film near the SiO2/Si(001) interface

Hiromichi Ohta*, Takanobu Watanabe, Iwao Ohdomari

*この研究の対応する著者

研究成果: Article査読

16 被引用数 (Scopus)

抄録

Potential energy distribution of interstitial O2 molecule in the vicinity of SiO2/Si(001) interface is investigated by means of classical molecular simulation. A 4-nm-thick SiO2 film model is built by oxidizing a Si(001) substrate, and the potential energy of an O2 molecule is calculated at Cartesian grid points with an interval of 0.05 nm in the SiO2 film region. The result shows that the potential energy of the interstitial site gradually rises with approaching the interface. The potential gradient is localized in the region within about 1 nm from the interface, which coincides with the experimental thickness of the interfacial strained layer. The potential energy is increased by about 0.62 eV at the SiO2/Si interface. The result agrees with a recently proposed kinetic model for dry oxidation of silicon [Phys. Rev. Lett. 96, 196102 (2006)], which argues that the oxidation rate is fully limited by the oxidant diffusion.

本文言語English
論文番号155326
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
78
15
DOI
出版ステータスPublished - 2008 10月 29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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