Potential energy landscape of an interstitial O2 molecule in a SiO2 film near the SiO2/Si(001) interface

Hiromichi Ohta, Takanobu Watanabe, Iwao Ohdomari

    研究成果: Article

    15 引用 (Scopus)

    抄録

    Potential energy distribution of interstitial O2 molecule in the vicinity of SiO2/Si(001) interface is investigated by means of classical molecular simulation. A 4-nm-thick SiO2 film model is built by oxidizing a Si(001) substrate, and the potential energy of an O2 molecule is calculated at Cartesian grid points with an interval of 0.05 nm in the SiO2 film region. The result shows that the potential energy of the interstitial site gradually rises with approaching the interface. The potential gradient is localized in the region within about 1 nm from the interface, which coincides with the experimental thickness of the interfacial strained layer. The potential energy is increased by about 0.62 eV at the SiO2/Si interface. The result agrees with a recently proposed kinetic model for dry oxidation of silicon [Phys. Rev. Lett. 96, 196102 (2006)], which argues that the oxidation rate is fully limited by the oxidant diffusion.

    元の言語English
    記事番号155326
    ジャーナルPhysical Review B - Condensed Matter and Materials Physics
    78
    発行部数15
    DOI
    出版物ステータスPublished - 2008 10 29

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    Potential energy
    interstitials
    potential energy
    Molecules
    molecules
    Oxidation
    potential gradients
    oxidation
    Silicon
    Oxidants
    Thick films
    thick films
    energy distribution
    grids
    intervals
    Kinetics
    kinetics
    silicon
    Substrates
    simulation

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    これを引用

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