Preferred orientation and film structure of TaN films deposited by reactive magnetron sputtering

Suguru Noda*, Kun Tepsanongsuk, Yoshiko Tsuji, Yuya Kajikawa, Yoshifumi Ogawa, Hiroshi Komiyama

*この研究の対応する著者

研究成果: Article査読

17 被引用数 (Scopus)

抄録

The structural evolution of tantalum nitride (TaN) films deposited by reactive rf magnetron sputtering were studied. The formation mechanisms of these structures were systematically explained by mapping them in 2D graphs of film thickness against N2/Ar flow ratio. The texture maps of films deposited on a-SiO2 substrates were found to reflect both nucleation and growth states, while that of films deposited on poly-fcc TaN substrates reflected the growth stages. It was also found that evolutionary selection growth ocurred when the film was 200 nm thick to cause the PO change.

本文言語English
ページ(範囲)332-338
ページ数7
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
22
2
DOI
出版ステータスPublished - 2004 3月
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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