Preferred orientation of chemical vapor deposited polycrystalline silicon carbide films

Yuya Kajikawa*, Suguru Noda, Hiroshi Komiyama

*この研究の対応する著者

研究成果: Article査読

48 被引用数 (Scopus)

抄録

We investigated the mechanism that determines the preferred orientation of polycrystalline silicon carbide (SiC) films prepared by CVD from a mixture of dichlorodimethylsilane (DDS) and He. X-ray diffraction (XRD) measurements indicated that the major growth direction is either the (220) or the (111) plane. We developed a numerical model for predicting the preferred orientation, assuming Langmuir-type adsorption and reaction of the growth species. This model suggests that the (111) plane appears under reaction-limited deposition, while the (220) plane appears under adsorption-limited deposition. Our experimental and numerical results show good qualitative agreement with experimental results for films prepared from methyltrichlorosilane (MTS) and H2.

本文言語English
ページ(範囲)99-104
ページ数6
ジャーナルChemical Vapor Deposition
8
3
DOI
出版ステータスPublished - 2002 5 1
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 表面および界面
  • プロセス化学およびプロセス工学

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