a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 (rutile) substrates at 630°C by metalorganic chemical vapor deposition and their perfect epitaxial growths were confirmed by several x-ray diffraction measurements. As the bottom electrode, (101)-oriented conductive materials with the same rutile-type structure as the TiO2, RuO2, and IrO2, were epitaxially grown on (101)TiO2, (012)Al2O3, and (110)Al 2O3 substrates. Finally, a- and b-axis-oriented Bi 4Ti3O12-based materials, (Bi 4-xNdx)(Ti3-yVy)O12, were epitaxially grown on these conductive substrates with high reproducibility and a well-saturated P-E hysteresis loop with a remanent polarization above 20 μC/cm2 was observed. These results open the long-range lattice matching growth (the c-axis lattice parameter is about 3.3 nm) of a- and b-axis-oriented bismuth layer-structured ferroelectrics on conductive electrodes.
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