Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films with long-range lattice matching

Takayuki Watanabe*, Hiroshi Funakubo, Keisuke Saito, Toshimasa Suzuki, Masayuki Fujimoto, Minoru Osada, Yuji Noguchi, Masaru Miyayama

*この研究の対応する著者

研究成果: Article査読

105 被引用数 (Scopus)

抄録

a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 (rutile) substrates at 630°C by metalorganic chemical vapor deposition and their perfect epitaxial growths were confirmed by several x-ray diffraction measurements. As the bottom electrode, (101)-oriented conductive materials with the same rutile-type structure as the TiO2, RuO2, and IrO2, were epitaxially grown on (101)TiO2, (012)Al2O3, and (110)Al 2O3 substrates. Finally, a- and b-axis-oriented Bi 4Ti3O12-based materials, (Bi 4-xNdx)(Ti3-yVy)O12, were epitaxially grown on these conductive substrates with high reproducibility and a well-saturated P-E hysteresis loop with a remanent polarization above 20 μC/cm2 was observed. These results open the long-range lattice matching growth (the c-axis lattice parameter is about 3.3 nm) of a- and b-axis-oriented bismuth layer-structured ferroelectrics on conductive electrodes.

本文言語English
ページ(範囲)1660-1662
ページ数3
ジャーナルApplied Physics Letters
81
9
DOI
出版ステータスPublished - 2002 8 26
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub>-based thin films with long-range lattice matching」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル