TY - JOUR
T1 - Preparation and characterization of wide area, high quality diamond film using magnetoactive plasma chemical vapour deposition
AU - Hiraki, Akio
AU - Kawarada, Hiroshi
AU - Wei, Jin
AU - Suzuki, Jun Ichi
N1 - Funding Information:
The authors are grateful to Shimadzu Co. for technical cooperation. They also wish to thank Idemitsu Petrochemical Inc. and Semiconductor Energy Laboratory Inc. for collaboration in developing the magnetomi-crowave plasma CVD system. This work was supported in part by a Grant-in-Aid for Developmental Scientific Research (63850008) from the Ministry of Education and Culture of Japan.
PY - 1990/12/5
Y1 - 1990/12/5
N2 - A magnetomicrowave plasma was used for the low pressure deposition of diamond. The important point in the plasma deposition system is to set the electron cyclotron resonance (ECR) condition (875 G in the case of a 2.45 GHz microwave) at the deposition area. The high density plasma (above 1 × 1011 cm-3) necessary for high quality diamond formation was obtained by effective microwave absorption near the magnetic field, satisfying the ECR condition. The plasma is uniform at the discharge area (160 mm in diameter) and uniform diamond films of a high quality are obtained. From an investigation of diamond formation in the range 10-2-50 Torr in the same deposition system, it is obvious that the lower pressure reduces the formation temperature of diamond to 500 °C and that the effective species for diamond formation are low energy radicals.
AB - A magnetomicrowave plasma was used for the low pressure deposition of diamond. The important point in the plasma deposition system is to set the electron cyclotron resonance (ECR) condition (875 G in the case of a 2.45 GHz microwave) at the deposition area. The high density plasma (above 1 × 1011 cm-3) necessary for high quality diamond formation was obtained by effective microwave absorption near the magnetic field, satisfying the ECR condition. The plasma is uniform at the discharge area (160 mm in diameter) and uniform diamond films of a high quality are obtained. From an investigation of diamond formation in the range 10-2-50 Torr in the same deposition system, it is obvious that the lower pressure reduces the formation temperature of diamond to 500 °C and that the effective species for diamond formation are low energy radicals.
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U2 - 10.1016/0257-8972(90)90055-H
DO - 10.1016/0257-8972(90)90055-H
M3 - Article
AN - SCOPUS:0025701286
SN - 0257-8972
VL - 43-44
SP - 10
EP - 21
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
IS - PART 1
ER -