Preparation and characterization of wide area, high quality diamond film using magnetoactive plasma chemical vapour deposition

Akio Hiraki*, Hiroshi Kawarada, Jin Wei, Jun Ichi Suzuki

*この研究の対応する著者

研究成果: Article査読

24 被引用数 (Scopus)

抄録

A magnetomicrowave plasma was used for the low pressure deposition of diamond. The important point in the plasma deposition system is to set the electron cyclotron resonance (ECR) condition (875 G in the case of a 2.45 GHz microwave) at the deposition area. The high density plasma (above 1 × 1011 cm-3) necessary for high quality diamond formation was obtained by effective microwave absorption near the magnetic field, satisfying the ECR condition. The plasma is uniform at the discharge area (160 mm in diameter) and uniform diamond films of a high quality are obtained. From an investigation of diamond formation in the range 10-2-50 Torr in the same deposition system, it is obvious that the lower pressure reduces the formation temperature of diamond to 500 °C and that the effective species for diamond formation are low energy radicals.

本文言語English
ページ(範囲)10-21
ページ数12
ジャーナルSurface and Coatings Technology
43-44
PART 1
DOI
出版ステータスPublished - 1990 12月 5
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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