Cu‐metal‐doped glass films having a Cu:Si atomic ratio of 0.05 ± 0.002 were successfully prepared by a sol‐gel method using a dipping technique. The appearance of surface plasmon of Cu metal at about 570 nm was observed after heat treatment at or above 700°C. The third‐order nonlinear susceptibility (x3) was as high as 5.0 × 10–8 esu at 570 nm.
|ジャーナル||Journal of the American Ceramic Society|
|出版ステータス||Published - 1994|
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