PREPARATION AND PROPERTIES OF CeB//6, SmB//6, AND GdB//6.

T. Tanaka, R. Nishitani, C. Oshima, E. Bannai, S. Kawai

    研究成果: Article

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    Single crystals of CeB//6, SmB//6, and GdB//6 have been prepared by a floating-zone technique under a pressurized gas atmosphere of Ar. A zone leveling technique has been used successfully to prepare single crystals of GdB//6, a compound which peritectically decomposes. The crystals so obtained were almost stoichiometric and had a low-impurity level. The measured work functions of (001) surfaces of CeB//6 and GdB//6 are 2. 6 plus or minus 0. 1 eV, respectively. The temperature dependence of the electrical resistivity of CeB//6 resembles that of CeAl//3. The temperature dependence of the resistivity of SmB//6 single crystals is like that of a semiconductor and is similar to those reported for polycrystalline specimens.

    元の言語English
    ページ(範囲)3877-3883
    ページ数7
    ジャーナルJournal of Applied Physics
    51
    発行部数7
    DOI
    出版物ステータスPublished - 1980 7

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

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    Tanaka, T., Nishitani, R., Oshima, C., Bannai, E., & Kawai, S. (1980). PREPARATION AND PROPERTIES OF CeB//6, SmB//6, AND GdB//6. Journal of Applied Physics, 51(7), 3877-3883. https://doi.org/10.1063/1.328133