Preparation and properties of ferromagnetic antiperovskite Co3FeN thin films

Hideki Sakakibara*, Hiroki Ando, Tetsuya Miyawaki, Kenji Ueda, Hidefumi Asano

*この研究の対応する著者

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Thin films of Co3FeN with an antiperovskite structure were epitaxially grown on (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) substrates by reactive magnetron sputtering. The influence of the N2 volume concentration in the sputtering gas mixture on the structure and properties of Co3FeN thin films was systematically investigated. The optimized Co3FeN thin films exhibited a saturation magnetization, Ms, of 1350 emu/cc, which is comparable with the theoretical value. A negative anisotropic magnetoresistance (AMR) effect with an AMR ratio of up to -0.88% was observed at 4.2 K.

本文言語English
論文番号6971351
ジャーナルIEEE Transactions on Magnetics
50
11
DOI
出版ステータスPublished - 2014 11月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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