Preparation and properties of inverse perovskite Mn3GaN thin films and heterostructures

H. Tashiro, R. Suzuki, T. Miyawaki, K. Ueda, H. Asano*

*この研究の対応する著者

研究成果: Article査読

15 被引用数 (Scopus)

抄録

Thin films and heterostructures of Mn3GaN with an inverse perovskite structure were grown epitaxially on SrTiO3 (001) and (La0.18Sr0.82)(Al0.59Ta0.41)O3 (001) (LSAT) substrates by ion beam sputtering, and their structural and electrical properties have been investigated. Mn3GaN epitaxial thin films showed metallic behavior of temperature-dependent resistivity with a small maximum at 290-340 K. The maximum resistivity could be attributed to the magnetic transition from antiferromagnetism to paramagnetism. It has been found that epitaxial heterostructures formed by ferroelectric Ba0.7Sr0.3TiO3 and Mn3GaN layers exhibit a large magnetocapacitance effect of more than 2000% in an applied magnetic filed of 1.5 T.

本文言語English
ページ(範囲)299-301
ページ数3
ジャーナルJournal of the Korean Physical Society
63
3
DOI
出版ステータスPublished - 2013 8月
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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