Preparation of light-emitting organic field-effect transistors with asymmetric electrodes

Tomo Sakanoue, Ryo Yamada, Hirokazu Tada

研究成果: Conference contribution

抄録

Light-emitting organic field-effect transistors (LEOFETs) based on Poly [2-methoxy, 5-(2′-ethyl-hexoxy)-1, 4-phenylenevinylene] (MEH-PPV), α-sexithiophene (α-6T) and N,N′-Ditridecylperylene-3,4,9,10- tetracarboxylic diimide (PTCDI-C13) were prepared on a SiO 2 gate insulator. The LEOFETs based on MEH-PPV and α-6T showed a p-type semiconducting behavior whereas PTCDI-C13 operated in n-type FET. Asymmetric electrodes of Au-Al were prepared by twice of photolithography and lift-off techniques, and by electroplating of Au onto Al electrode to improved device performances. The emission efficiency of the devices with Au/Cr-Al was approximately 20 times higher than that of the device with Au/Al-Au/Al electrodes at the gate and drain voltages of -100 V. The emission region was observed with an optical microscope. The emission region was found to be very homogeneous along the drain electrode, and it did not shift when the gate and drain voltages changed. Although the carrier injection was improved by using asymmetric electrodes, the number of the carriers injected from the drain electrode was still lower than that from the source electrode in the unipolar devices.

元の言語English
ホスト出版物のタイトルProceedings of SPIE - The International Society for Optical Engineering
編集者Z. Bao, D.J. Gundlach
ページ1-8
ページ数8
5940
DOI
出版物ステータスPublished - 2005
外部発表Yes
イベントOrganic Field-Effect Transistors IV - San Diego, CA, United States
継続期間: 2005 7 312005 8 2

Other

OtherOrganic Field-Effect Transistors IV
United States
San Diego, CA
期間05/7/3105/8/2

Fingerprint

Organic field effect transistors
field effect transistors
preparation
Electrodes
electrodes
carrier injection
electroplating
Electric potential
electric potential
Electroplating
Photolithography
photolithography
Field effect transistors
optical microscopes
Microscopes
insulators
shift

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

これを引用

Sakanoue, T., Yamada, R., & Tada, H. (2005). Preparation of light-emitting organic field-effect transistors with asymmetric electrodes. : Z. Bao, & D. J. Gundlach (版), Proceedings of SPIE - The International Society for Optical Engineering (巻 5940, pp. 1-8). [59400Y] https://doi.org/10.1117/12.618020

Preparation of light-emitting organic field-effect transistors with asymmetric electrodes. / Sakanoue, Tomo; Yamada, Ryo; Tada, Hirokazu.

Proceedings of SPIE - The International Society for Optical Engineering. 版 / Z. Bao; D.J. Gundlach. 巻 5940 2005. p. 1-8 59400Y.

研究成果: Conference contribution

Sakanoue, T, Yamada, R & Tada, H 2005, Preparation of light-emitting organic field-effect transistors with asymmetric electrodes. : Z Bao & DJ Gundlach (版), Proceedings of SPIE - The International Society for Optical Engineering. 巻. 5940, 59400Y, pp. 1-8, Organic Field-Effect Transistors IV, San Diego, CA, United States, 05/7/31. https://doi.org/10.1117/12.618020
Sakanoue T, Yamada R, Tada H. Preparation of light-emitting organic field-effect transistors with asymmetric electrodes. : Bao Z, Gundlach DJ, 編集者, Proceedings of SPIE - The International Society for Optical Engineering. 巻 5940. 2005. p. 1-8. 59400Y https://doi.org/10.1117/12.618020
Sakanoue, Tomo ; Yamada, Ryo ; Tada, Hirokazu. / Preparation of light-emitting organic field-effect transistors with asymmetric electrodes. Proceedings of SPIE - The International Society for Optical Engineering. 編集者 / Z. Bao ; D.J. Gundlach. 巻 5940 2005. pp. 1-8
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