Preparation of light-emitting organic field-effect transistors with asymmetric electrodes

Tomo Sakanoue*, Ryo Yamada, Hirokazu Tada

*この研究の対応する著者

研究成果: Conference contribution

抄録

Light-emitting organic field-effect transistors (LEOFETs) based on Poly [2-methoxy, 5-(2′-ethyl-hexoxy)-1, 4-phenylenevinylene] (MEH-PPV), α-sexithiophene (α-6T) and N,N′-Ditridecylperylene-3,4,9,10- tetracarboxylic diimide (PTCDI-C13) were prepared on a SiO 2 gate insulator. The LEOFETs based on MEH-PPV and α-6T showed a p-type semiconducting behavior whereas PTCDI-C13 operated in n-type FET. Asymmetric electrodes of Au-Al were prepared by twice of photolithography and lift-off techniques, and by electroplating of Au onto Al electrode to improved device performances. The emission efficiency of the devices with Au/Cr-Al was approximately 20 times higher than that of the device with Au/Al-Au/Al electrodes at the gate and drain voltages of -100 V. The emission region was observed with an optical microscope. The emission region was found to be very homogeneous along the drain electrode, and it did not shift when the gate and drain voltages changed. Although the carrier injection was improved by using asymmetric electrodes, the number of the carriers injected from the drain electrode was still lower than that from the source electrode in the unipolar devices.

本文言語English
ホスト出版物のタイトルProceedings of SPIE - The International Society for Optical Engineering
編集者Z. Bao, D.J. Gundlach
ページ1-8
ページ数8
5940
DOI
出版ステータスPublished - 2005
外部発表はい
イベントOrganic Field-Effect Transistors IV - San Diego, CA, United States
継続期間: 2005 7 312005 8 2

Other

OtherOrganic Field-Effect Transistors IV
国/地域United States
CitySan Diego, CA
Period05/7/3105/8/2

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 凝縮系物理学

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