Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 solid solution films by MOCVD and their properties

Masatoshi Mitsuya; Minoru Osada; Keisuke Saito; Hiroshi Funakubo

doi:10.1016/S0022-0248(01)01985-6

Preparation of SrBi₂(Ta_0.7Nb_0.3)₂O₉-Bi ₃TaTiO₉ solid solution films by MOCVD and their properties

Masatoshi Mitsuya, Minoru Osada, Keisuke Saito, Hiroshi Funakubo^*

^*この研究の対応する著者

研究成果: Article › 査読

4 被引用数 (Scopus)

抄録

Thin films of solid solution of SrBi₂(Ta_0.7Nb_0.3)₂O₉-Bi ₃TaTiO₉ [(1 - x)SBT-xBTT] were prepared on (1 1 1)Pt/Ti/SiO₂/Si substrates at 650°C by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (1 0 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr_0.8Bi_2.2(Ta_0.7Nb_0.3)₂O ₉ film. Moreover, Curie temperature of this material with x = 0.3 was 440°C and was almost the same as that of Sr_0.8Bi_2.2(Ta_0.7Nb_0.3)₂O ₉.

本文言語	English
ページ（範囲）	473-477
ページ数	5
ジャーナル	Journal of Crystal Growth
巻	237-239
号	1-4 I
DOI	https://doi.org/10.1016/S0022-0248(01)01985-6
出版ステータス	Published - 2002 4
外部発表	はい

ASJC Scopus subject areas

凝縮系物理学

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10.1016/S0022-0248(01)01985-6

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title = "Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 solid solution films by MOCVD and their properties",

abstract = "Thin films of solid solution of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 [(1 - x)SBT-xBTT] were prepared on (1 1 1)Pt/Ti/SiO2/Si substrates at 650°C by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (1 0 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9 film. Moreover, Curie temperature of this material with x = 0.3 was 440°C and was almost the same as that of Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9.",

keywords = "A1. Solid solutions, A3. Chemical vapor deposition processes, B1. Inorganic compounds, B2. Ferroelectric materials",

author = "Masatoshi Mitsuya and Minoru Osada and Keisuke Saito and Hiroshi Funakubo",

year = "2002",

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doi = "10.1016/S0022-0248(01)01985-6",

language = "English",

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journal = "Journal of Crystal Growth",

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T1 - Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 solid solution films by MOCVD and their properties

AU - Mitsuya, Masatoshi

AU - Osada, Minoru

AU - Saito, Keisuke

AU - Funakubo, Hiroshi

PY - 2002/4

Y1 - 2002/4

N2 - Thin films of solid solution of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 [(1 - x)SBT-xBTT] were prepared on (1 1 1)Pt/Ti/SiO2/Si substrates at 650°C by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (1 0 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9 film. Moreover, Curie temperature of this material with x = 0.3 was 440°C and was almost the same as that of Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9.

AB - Thin films of solid solution of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 [(1 - x)SBT-xBTT] were prepared on (1 1 1)Pt/Ti/SiO2/Si substrates at 650°C by metal organic chemical vapor deposition (MOCVD). Solid solution composition was ascertained by linear lattice parameter change with composition following Vegard's law. Films showed a strong (1 0 3) orientation. Dielectric constant linearly decreased with increasing x and the remnant polarization took a maximum value at x = 0.3 and was almost the same as Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9 film. Moreover, Curie temperature of this material with x = 0.3 was 440°C and was almost the same as that of Sr0.8Bi2.2(Ta0.7Nb0.3)2O 9.

KW - A1. Solid solutions

KW - A3. Chemical vapor deposition processes

KW - B1. Inorganic compounds

KW - B2. Ferroelectric materials

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