Four entrance channels to the pentachlorodisilane (Si2HCl5) potential energy well, namely, SiCl2 + SiHCl3, SiCl4 + SiHCl, Cl3SiSiCl + HCl, and SiCl3 + SiHCl2, were analyzed in detail through transition state theory, Rice–Ramsperger–Kassel–Marcus (RRKM) theory, and solution of the multichannel master equation. The stationary points in the potential energy surface were optimized, and their vibrational frequencies and rotational constants calculated at the (U)B3LYP/6–31+G(d,p) level of theory; the (U)CCSD(T)/aug-cc-pVTZ level was then used for accurate estimation of activation energies. The pressure and temperature dependence of the rate coefficients of the channels related to Si2HCl5 stabilization/dissociation was determined along a wide range of conditions, for the first time. All channels showed strong pressure dependence in the four cases, at least at low-to-moderate pressure conditions. Each entrance channel leads to the formation of different products under different conditions, and the mechanism was analyzed in detail. The results indicated that at atmospheric pressure the reactions are in the falloff region, and therefore do not support the adoption of high-pressure limit rate coefficients in reaction models designed for simulation of systems at atmospheric or subatmospheric pressure conditions.
ASJC Scopus subject areas