Pressure effect of superconducting transition temperature for boron-doped diamond films

F. Tomioka, S. Tsuda, T. Yamaguchi, Hiroshi Kawarada, Y. Takano

    研究成果: Article

    3 引用 (Scopus)

    抄録

    The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δTc/δP = -1.17 × 10-1 K/GPa and -1.51 × 10-2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.

    元の言語English
    ページ(範囲)1228-1230
    ページ数3
    ジャーナルPhysica C: Superconductivity and its Applications
    468
    発行部数15-20
    DOI
    出版物ステータスPublished - 2008 9 15

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    Boron
    Pressure effects
    Diamond films
    pressure effects
    diamond films
    Superconducting transition temperature
    boron
    transition temperature
    Thin films
    diamonds
    thin films
    Diamond
    Chemical vapor deposition
    Diamonds
    Microwaves
    vapor deposition
    Plasmas
    microwaves
    electrical resistivity
    expansion

    ASJC Scopus subject areas

    • Condensed Matter Physics

    これを引用

    Pressure effect of superconducting transition temperature for boron-doped diamond films. / Tomioka, F.; Tsuda, S.; Yamaguchi, T.; Kawarada, Hiroshi; Takano, Y.

    :: Physica C: Superconductivity and its Applications, 巻 468, 番号 15-20, 15.09.2008, p. 1228-1230.

    研究成果: Article

    Tomioka, F. ; Tsuda, S. ; Yamaguchi, T. ; Kawarada, Hiroshi ; Takano, Y. / Pressure effect of superconducting transition temperature for boron-doped diamond films. :: Physica C: Superconductivity and its Applications. 2008 ; 巻 468, 番号 15-20. pp. 1228-1230.
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    AU - Tsuda, S.

    AU - Yamaguchi, T.

    AU - Kawarada, Hiroshi

    AU - Takano, Y.

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