Pressure effect of superconducting transition temperature for boron-doped diamond films

F. Tomioka; S. Tsuda; T. Yamaguchi; H. Kawarada; Y. Takano

doi:10.1016/j.physc.2008.05.039

Pressure effect of superconducting transition temperature for boron-doped diamond films

F. Tomioka, S. Tsuda, T. Yamaguchi, H. Kawarada, Y. Takano

基幹理工学部

研究成果: Article

3 引用（Scopus）

抜粋

The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δT_c/δP = -1.17 × 10^-1 K/GPa and -1.51 × 10^-2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.

元の言語	English
ページ（範囲）	1228-1230
ページ数	3
ジャーナル	Physica C: Superconductivity and its applications
巻	468
発行部数	15-20
DOI	https://doi.org/10.1016/j.physc.2008.05.039
出版物ステータス	Published - 2008 9 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

文献にアクセス

10.1016/j.physc.2008.05.039

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これを引用

Tomioka, F., Tsuda, S., Yamaguchi, T., Kawarada, H., & Takano, Y. (2008). Pressure effect of superconducting transition temperature for boron-doped diamond films. Physica C: Superconductivity and its applications, 468(15-20), 1228-1230. https://doi.org/10.1016/j.physc.2008.05.039

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abstract = "The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δTc/δP = -1.17 × 10-1 K/GPa and -1.51 × 10-2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.",

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AU - Tomioka, F.

AU - Tsuda, S.

AU - Yamaguchi, T.

AU - Kawarada, H.

AU - Takano, Y.

PY - 2008/9/15

Y1 - 2008/9/15

N2 - The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δTc/δP = -1.17 × 10-1 K/GPa and -1.51 × 10-2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.

AB - The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δTc/δP = -1.17 × 10-1 K/GPa and -1.51 × 10-2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.

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KW - Pressure

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