抄録
The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δTc/δP = -1.17 × 10-1 K/GPa and -1.51 × 10-2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1228-1230 |
| ページ数 | 3 |
| ジャーナル | Physica C: Superconductivity and its Applications |
| 巻 | 468 |
| 発行部数 | 15-20 |
| DOI | |
| 出版物ステータス | Published - 2008 9 15 |
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ASJC Scopus subject areas
- Condensed Matter Physics
これを引用
Pressure effect of superconducting transition temperature for boron-doped diamond films. / Tomioka, F.; Tsuda, S.; Yamaguchi, T.; Kawarada, Hiroshi; Takano, Y.
：: Physica C: Superconductivity and its Applications, 巻 468, 番号 15-20, 15.09.2008, p. 1228-1230.研究成果: Article
}
TY - JOUR
T1 - Pressure effect of superconducting transition temperature for boron-doped diamond films
AU - Tomioka, F.
AU - Tsuda, S.
AU - Yamaguchi, T.
AU - Kawarada, Hiroshi
AU - Takano, Y.
PY - 2008/9/15
Y1 - 2008/9/15
N2 - The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δTc/δP = -1.17 × 10-1 K/GPa and -1.51 × 10-2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.
AB - The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δTc/δP = -1.17 × 10-1 K/GPa and -1.51 × 10-2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.
KW - Boron
KW - Diamond
KW - Pressure
KW - Superconductivity
UR - http://www.scopus.com/inward/record.url?scp=50349092853&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50349092853&partnerID=8YFLogxK
U2 - 10.1016/j.physc.2008.05.039
DO - 10.1016/j.physc.2008.05.039
M3 - Article
AN - SCOPUS:50349092853
VL - 468
SP - 1228
EP - 1230
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
SN - 0921-4534
IS - 15-20
ER -