Pressure effect of superconducting transition temperature for boron-doped diamond films

F. Tomioka, S. Tsuda, T. Yamaguchi, H. Kawarada, Y. Takano

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The superconducting transition temperature of homoepitaxial boron-doped diamond thin films fabricated by microwave plasma-assisted chemical vapor deposition technique depend on substrate orientation. In addition, heavily doped diamond thin films indicate anisotropic lattice expansion. From these points of view, pressure effect will give us knowledge of the superconducting mechanism of boron-doped diamond. We report measurements of the electrical resistivity of heavily boron-doped diamond thin film under pressure up to P = 1.45 GPa and 1.27 GPa for (1 1 1) and (1 0 0) homoepitaxial thin films, respectively. The superconducting transition temperature decreases linearly with increasing pressure by a rate of δTc/δP = -1.17 × 10-1 K/GPa and -1.51 × 10-2 K/GPa for (1 1 1) and (1 0 0) thin film, respectively.

本文言語English
ページ(範囲)1228-1230
ページ数3
ジャーナルPhysica C: Superconductivity and its applications
468
15-20
DOI
出版ステータスPublished - 2008 9 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • エネルギー工学および電力技術
  • 電子工学および電気工学

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