Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa-1 operated under 2 v

Shunsuke Yamada*, Takaaki Sato, Hiroshi Toshiyoshi

*この研究の対応する著者

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Ionic gel is used for the first time on a ZnO field effect transistor (FET) to enhance the gate capacitance due to the electrical double layer, thereby developing an extremely sensitive tactile pressure sensor of 2,200 kPa-1, which is at least 10 times greater than the conventional reports.

本文言語English
ホスト出版物のタイトルTRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
出版社Institute of Electrical and Electronics Engineers Inc.
ページ766-769
ページ数4
ISBN(電子版)9781538627310
DOI
出版ステータスPublished - 2017 7 26
外部発表はい
イベント19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017 - Kaohsiung, Taiwan, Province of China
継続期間: 2017 6 182017 6 22

出版物シリーズ

名前TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017
国/地域Taiwan, Province of China
CityKaohsiung
Period17/6/1817/6/22

ASJC Scopus subject areas

  • 化学的な安全衛生
  • 器械工学
  • 電子工学および電気工学

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