Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa-1 operated under 2 v

Shunsuke Yamada, Takaaki Sato, Hiroshi Toshiyoshi

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

Ionic gel is used for the first time on a ZnO field effect transistor (FET) to enhance the gate capacitance due to the electrical double layer, thereby developing an extremely sensitive tactile pressure sensor of 2,200 kPa-1, which is at least 10 times greater than the conventional reports.

元の言語English
ホスト出版物のタイトルTRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems
出版者Institute of Electrical and Electronics Engineers Inc.
ページ766-769
ページ数4
ISBN(電子版)9781538627310
DOI
出版物ステータスPublished - 2017 7 26
外部発表Yes
イベント19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017 - Kaohsiung, Taiwan, Province of China
継続期間: 2017 6 182017 6 22

出版物シリーズ

名前TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017
Taiwan, Province of China
Kaohsiung
期間17/6/1817/6/22

    フィンガープリント

ASJC Scopus subject areas

  • Chemical Health and Safety
  • Instrumentation
  • Electrical and Electronic Engineering

これを引用

Yamada, S., Sato, T., & Toshiyoshi, H. (2017). Pressure sensitive ionic gel-fets of extremely high sensitivity over 2,200 kPa-1 operated under 2 v. : TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 766-769). [7994161] (TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TRANSDUCERS.2017.7994161