Pressure tuning of strains in semiconductor heterostructures: (ZnSe epilayer)/(GaAs epilayer)

Benjamin Rockwell*, H. R. Chandrasekhar, Meera Chandrasekhar, A. K. Ramdas, M. Kobayashi, R. L. Gunshor

*この研究の対応する著者

研究成果: Article査読

72 被引用数 (Scopus)

抄録

The heavy-hole and light-hole excitons of a pseudomorphic ZnSe film grown on a GaAs epilayer by molecular-beam epitaxy, are studied as a function of applied hydrostatic pressure using photomodulated reflectance spectroscopy. At ambient pressure, the signature in the spectrum due to the heavy-hole exciton occurs at an energy lower than that of the light-hole exciton, a consequence of the compressive biaxial strain in ZnSe due to its lattice mismatch with GaAs. As the pressure is increased, the two signatures approach each other in energy and coalesce at 36.2 kbar. The difference in the compressibility of ZnSe from that of GaAs generates a tensile strain that progressively compensates the lattice-mismatch-induced compressive strain and finally, at 36.2 kbar, the heterostructure is strain free. Beyond this pressure, the strain in ZnSe transforms from biaxial compression to biaxial tension, the light-hole signature now occurring at the lower energy. The transformation of strains via pressure tuning is continuous and reversible. The separation between the heavy-hole and light-hole signatures is superlinear in pressure, suggestive of a pressure-dependent shear-deformation-potential constant.

本文言語English
ページ(範囲)11307-11314
ページ数8
ジャーナルPhysical Review B
44
20
DOI
出版ステータスPublished - 1991
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学

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