Probability of Atomic or Molecular Oxygen Species in Silicon and Silicon Dioxide

Tadatsugu Hoshino, Masayuki Hata, Saburo Neya, Yasushiro Nishioka, Takanobu Watanabe, Kosuke Tatsumura, Iwao Ohdomari

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Quantum chemical calculations were performed to investigate the probabilities of the existence of molecular and atomic oxygen inside Si and SiO2. Optimized configurations were obtained for both Si and SiO 2 clusters including an O2 molecule or an O atom in the spin singlet or triplet state. The spin triplet O2 molecule is the most favorable in SiO2, while the spin singlet O atom is dominant in Si. The diffusion of an O2 molecule from the outside to the inside of SiO2 was computed with its potential energy change. The dissociation reaction of an O2 molecule at the SiO2/Si interface and the transfer reaction of an O atom across the SiO2/Si interface were also examined by estimating for their energy barriers.

本文言語English
ページ(範囲)6535-6542
ページ数8
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
10
DOI
出版ステータスPublished - 2003 10

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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