PROCESS FOR A CMOS CHANNEL-STOP IMPLANTATION SELF-ALIGNED TO THE P-WELL AND P-WELL ACTIVE AREA.

研究成果: Article

抜粋

A simplified isolation process for test CMOS LSI chip fabrication is proposed. In the process, channel-stop implantation is self-aligned to the p-well and the p-well active area. It is shown that a CMOS device with a one-level metallization can be fabricated with only seven photomasks using the process.

元の言語English
ジャーナルIEEE Transactions on Electron Devices
ED-34
発行部数12
出版物ステータスPublished - 1987 12 1
外部発表Yes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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