Process parameter calibration for millimeter-wave CMOS back-end device design with electromagnetic field analysis

S. Amakawa, A. Orii, K. Katayama, K. Takano, M. Motoyoshi, T. Yoshida, M. Fujishima

研究成果: Conference contribution

7 被引用数 (Scopus)

抄録

This paper presents a systematic procedure for calibrating process parameters for electromagnetic field analysis. A few CMOS back-end material parameters are first chosen as fitting parameters by sensitivity analysis, and then their values are unambiguously determined from contour maps showing electrical characteristics versus effective material parameters. Calibration with measured data for 1-170 GHz is shown to give reasonably predictive simulation even at higher frequencies. Extraction of effective complex permittivities are also attempted up to 325 GHz in the presence of dummy metal fills for two filling patterns. The results indicate that the effective-parameter approach to dummy metal fills can reproduce measured propagation constants of transmission lines. The predictive power of such a simple approach is yet to be assessed.

本文言語English
ホスト出版物のタイトル2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ182-187
ページ数6
ISBN(印刷版)9781479921928
DOI
出版ステータスPublished - 2014
外部発表はい
イベント27th International Conference on Microelectronic Test Structures, ICMTS 2014 - Udine, Italy
継続期間: 2014 3 242014 3 27

出版物シリーズ

名前IEEE International Conference on Microelectronic Test Structures

Other

Other27th International Conference on Microelectronic Test Structures, ICMTS 2014
国/地域Italy
CityUdine
Period14/3/2414/3/27

ASJC Scopus subject areas

  • 電子工学および電気工学

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