Propagation characteristics of SH-SAW in (1120) ZnO layer/silica glass substrate structures

Atsushi Tanaka*, Takahiko Yanagitani, Mami Matsukawa, Watanabe Yoshiaki

*この研究の対応する著者

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

A (112̄0) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients (K2) in the ZnO (0°, 90°, Ψ) film/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0°, 90°, 55°) film/silica glass substrate structure had a relatively large K2 value of 3.4 % at H/λ=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results clearly demonstrated SH-SAW excitation in the structure.

本文言語English
ホスト出版物のタイトル2007 IEEE Ultrasonics Symposium Proceedings, IUS
ページ280-283
ページ数4
DOI
出版ステータスPublished - 2007 12 1
外部発表はい
イベント2007 IEEE Ultrasonics Symposium, IUS - New York, NY, United States
継続期間: 2007 10 282007 10 31

出版物シリーズ

名前Proceedings - IEEE Ultrasonics Symposium
ISSN(印刷版)1051-0117

Other

Other2007 IEEE Ultrasonics Symposium, IUS
国/地域United States
CityNew York, NY
Period07/10/2807/10/31

ASJC Scopus subject areas

  • 音響学および超音波学

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