Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface

Yusuke Mori*, Hiroshi Kawarada, Akio Hiraki

*この研究の対応する著者

研究成果: Article査読

123 被引用数 (Scopus)

抄録

The current-voltage characteristics of Schottky diodes fabricated using as-grown diamond films depend on the electronegativities of metals. However for diamond films oxidized by boiling in a saturated solution of CrO in H 2SO4 or by exposure to an oxygen plasma, this dependence vanishes. This is because of the adsorption of oxygen onto the surfaces of diamond synthesized by chemical vapor deposition. It has been shown by x-ray photoelectron spectroscopy that very little oxide is present on the as-grown surfaces, but that at least submonolayer oxygen coverage is present on the oxidized surfaces.

本文言語English
ページ(範囲)940-941
ページ数2
ジャーナルApplied Physics Letters
58
9
DOI
出版ステータスPublished - 1991
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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