Proposal and numerical analysis of ultra-fast optical logic devices with integrated InAs QD-SOA and ring resonators

A. Matsumoto*, K. Kuwata, K. Akahane, K. Utaka

*この研究の対応する著者

研究成果

抄録

We analytically investigate the dynamic behaviors of the proposed optical XNOR and AND logic gate devices, with an monolithically integrated highly stacked InAs quantum dots structure SOA fabricated with the strain compensation technique and ring resonators. The calculated results indicate that the optical logic device can operate the logic gate functions at 160Gb/s RZ signals with large eye opening, the value of which is estimated to be 90.3%, as compared to the bulk-type SOA. And we show the potential of this device for routing signal processing in ultra-fast photonic network system.

本文言語English
ホスト出版物のタイトル2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
出版ステータスPublished - 2011 12 1
イベント2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 - Berlin, Germany
継続期間: 2011 5 222011 5 26

出版物シリーズ

名前Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(印刷版)1092-8669

Conference

Conference2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
国/地域Germany
CityBerlin
Period11/5/2211/5/26

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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