Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates

T. Koyama; T. Onuma; H. Masui; A. Chakraborty; B. A. Haskell; S. Keller; U. K. Mishra; J. S. Speck; S. Nakamura; S. P. DenBaars; T. Sota; S. F. Chichibu

doi:10.1063/1.2337085

Prospective emission efficiency and in-plane light polarization of nonpolar m-plane in_xGa_1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates

T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, S. F. Chichibu^*

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

76 被引用数 (Scopus)

抄録

Prospective equivalent internal quantum efficiency (η_int) of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (11̄00) In_xGa_1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the η_int value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.

本文言語	English
論文番号	091906
ジャーナル	Applied Physics Letters
巻	89
号	9
DOI	https://doi.org/10.1063/1.2337085
出版ステータス	Published - 2006

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.2337085

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引用スタイル

Koyama, T., Onuma, T., Masui, H., Chakraborty, A., Haskell, B. A., Keller, S., Mishra, U. K., Speck, J. S., Nakamura, S., DenBaars, S. P., Sota, T., & Chichibu, S. F. (2006). Prospective emission efficiency and in-plane light polarization of nonpolar m-plane in_xGa_1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates. Applied Physics Letters, 89(9), [091906]. https://doi.org/10.1063/1.2337085

Koyama, T, Onuma, T, Masui, H, Chakraborty, A, Haskell, BA, Keller, S, Mishra, UK, Speck, JS, Nakamura, S, DenBaars, SP, Sota, T & Chichibu, SF 2006, 'Prospective emission efficiency and in-plane light polarization of nonpolar m-plane in_xGa_1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates', Applied Physics Letters, vol. 89, no. 9, 091906. https://doi.org/10.1063/1.2337085

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title = "Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates",

abstract = "Prospective equivalent internal quantum efficiency (ηint) of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (1{\=1}00) InxGa1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.",

author = "T. Koyama and T. Onuma and H. Masui and A. Chakraborty and Haskell, {B. A.} and S. Keller and Mishra, {U. K.} and Speck, {J. S.} and S. Nakamura and DenBaars, {S. P.} and T. Sota and Chichibu, {S. F.}",

year = "2006",

doi = "10.1063/1.2337085",

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T1 - Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates

AU - Koyama, T.

AU - Onuma, T.

AU - Masui, H.

AU - Chakraborty, A.

AU - Haskell, B. A.

AU - Keller, S.

AU - Mishra, U. K.

AU - Speck, J. S.

AU - Nakamura, S.

AU - DenBaars, S. P.

AU - Sota, T.

AU - Chichibu, S. F.

PY - 2006

Y1 - 2006

N2 - Prospective equivalent internal quantum efficiency (ηint) of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (11̄00) InxGa1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.

AB - Prospective equivalent internal quantum efficiency (ηint) of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (11̄00) InxGa1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.

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