Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates

T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, S. F. Chichibu

研究成果: Article

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Prospective equivalent internal quantum efficiency (ηint) of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (11̄00) InxGa1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.

元の言語English
記事番号091906
ジャーナルApplied Physics Letters
89
発行部数9
DOI
出版物ステータスPublished - 2006 9 8

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント Prospective emission efficiency and in-plane light polarization of nonpolar m-plane in<sub>x</sub>Ga<sub>1-x</sub>N/GaN blue light emitting diodes fabricated on freestanding GaN substrates' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

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    Koyama, T., Onuma, T., Masui, H., Chakraborty, A., Haskell, B. A., Keller, S., Mishra, U. K., Speck, J. S., Nakamura, S., DenBaars, S. P., Sota, T., & Chichibu, S. F. (2006). Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates. Applied Physics Letters, 89(9), [091906]. https://doi.org/10.1063/1.2337085