Prospective equivalent internal quantum efficiency (ηint) of approximately 34% at 300 K was demonstrated for the blue emission peak of nonpolar m-plane (11̄00) InxGa1-xN/GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300 K.
|ジャーナル||Applied Physics Letters|
|出版ステータス||Published - 2006|
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