Prototype of the Stacked CdZnTe Semiconductor Detector for 16N Measurement

Nishizawa Hiroshi, Inujima Hiroshi, Fujiwara Hirotsugu, Nakamura Hiroaki

研究成果: Article査読

抄録

The prototype model of the stacked CdZnTe semiconductor detector, which is able to measure the 6.13MeV ᵧ-ray from 16N, was fabricated. The prototype's response calculation was carried out by Monte-Carlo method. The result of the response calculation agreed with the experiment data of check sources of 137Cs and 60Co, and 16N which was measured at vicinity of the primary cooling water pipe of the nuclear reactor. The source spectra were unfolded with detector's response function obtained by simulation, and it is indicated that the incident 7-ray energy and its intensity ratio was identified and that the energy of 6MeV 7-ray could be measured by the prototype of the stacked detector.

本文言語English
ページ(範囲)458-463
ページ数6
ジャーナルieej transactions on sensors and micromachines
121
8
DOI
出版ステータスPublished - 2001
外部発表はい

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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