Proximity gettering of heavy metals by high-energy ion implantation

Takashi Kuroi, Youji Kawasaki, Shigeki Komori, Kouji Fukumoto, Masahide Inuishi, Katsuhiro Tsukamoto, Hiroshi Shinyashiki, Takayuki Shingyoji

研究成果: Article査読

35 被引用数 (Scopus)

抄録

We studied the proximity gettering of heavy metals by secondary defects, using high-energy, high-dose ion implantation by means of intentional contamination of samples with copper and iron. It was demonstrated that the secondary defects induced by high-energy boron or silicon implantation can act as gettering sites of heavy metals and reduce the junction leakage current. Proximity gettering by silicon implantation is found to be more effective than that by boron implantation. Moreover it is found to be difficult to getter iron atoms in comparison with copper atoms.

本文言語English
ページ(範囲)303-307
ページ数5
ジャーナルJapanese journal of applied physics
32
1 S
DOI
出版ステータスPublished - 1993 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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