Proximity gettering of heavy metals by high energy ion implantation

T. Kuroi; Y. Kawasaki; S. Komori; K. Fukumoto; M. Inuishi; K. Tsukamoto; H. Shinyashiki; T. Shingyoji

doi:10.7567/ssdm.1992.pd2-5

Proximity gettering of heavy metals by high energy ion implantation

T. Kuroi, Y. Kawasaki, S. Komori, K. Fukumoto, M. Inuishi, K. Tsukamoto, H. Shinyashiki, T. Shingyoji

研究成果: Paper › 査読

2 被引用数 (Scopus)

抄録

We studied the proximity gettering of heavy metals by secondary defects, using high energy, high dose ion implantation by means of intentionally contaminating samples with copper and iron. It was demonstrated that the secondary defects induced by high energy boron or silicon implantation can act as a gettering site of heavy metals and reduce the junction leakage current. The proximity gettering by silicon implantation is more effective than that by boron implantation. Moreover it seems to be difficult to getter iron atoms in comparison with copper atoms.

本文言語	English
ページ	398-400
ページ数	3
DOI	https://doi.org/10.7567/ssdm.1992.pd2-5
出版ステータス	Published - 1992
外部発表	はい
イベント	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn 継続期間: 1992 8 26 → 1992 8 28

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	92/8/26 → 92/8/28

ASJC Scopus subject areas

Engineering(all)

文献へのアクセス

10.7567/ssdm.1992.pd2-5

他のファイルとリンク

フィンガープリント「Proximity gettering of heavy metals by high energy ion implantation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Kuroi, T., Kawasaki, Y., Komori, S., Fukumoto, K., Inuishi, M., Tsukamoto, K., Shinyashiki, H., & Shingyoji, T. (1992). Proximity gettering of heavy metals by high energy ion implantation. 398-400. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, . https://doi.org/10.7567/ssdm.1992.pd2-5

Kuroi, T, Kawasaki, Y, Komori, S, Fukumoto, K, Inuishi, M, Tsukamoto, K, Shinyashiki, H & Shingyoji, T 1992, 'Proximity gettering of heavy metals by high energy ion implantation', Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, 92/8/26 - 92/8/28 pp. 398-400. https://doi.org/10.7567/ssdm.1992.pd2-5

@conference{d29c7d975fb14ded99157c926157766e,

title = "Proximity gettering of heavy metals by high energy ion implantation",

abstract = "We studied the proximity gettering of heavy metals by secondary defects, using high energy, high dose ion implantation by means of intentionally contaminating samples with copper and iron. It was demonstrated that the secondary defects induced by high energy boron or silicon implantation can act as a gettering site of heavy metals and reduce the junction leakage current. The proximity gettering by silicon implantation is more effective than that by boron implantation. Moreover it seems to be difficult to getter iron atoms in comparison with copper atoms.",

author = "T. Kuroi and Y. Kawasaki and S. Komori and K. Fukumoto and M. Inuishi and K. Tsukamoto and H. Shinyashiki and T. Shingyoji",

year = "1992",

doi = "10.7567/ssdm.1992.pd2-5",

language = "English",

pages = "398--400",

note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

}

TY - CONF

T1 - Proximity gettering of heavy metals by high energy ion implantation

AU - Kuroi, T.

AU - Kawasaki, Y.

AU - Komori, S.

AU - Fukumoto, K.

AU - Inuishi, M.

AU - Tsukamoto, K.

AU - Shinyashiki, H.

AU - Shingyoji, T.

PY - 1992

Y1 - 1992

N2 - We studied the proximity gettering of heavy metals by secondary defects, using high energy, high dose ion implantation by means of intentionally contaminating samples with copper and iron. It was demonstrated that the secondary defects induced by high energy boron or silicon implantation can act as a gettering site of heavy metals and reduce the junction leakage current. The proximity gettering by silicon implantation is more effective than that by boron implantation. Moreover it seems to be difficult to getter iron atoms in comparison with copper atoms.

AB - We studied the proximity gettering of heavy metals by secondary defects, using high energy, high dose ion implantation by means of intentionally contaminating samples with copper and iron. It was demonstrated that the secondary defects induced by high energy boron or silicon implantation can act as a gettering site of heavy metals and reduce the junction leakage current. The proximity gettering by silicon implantation is more effective than that by boron implantation. Moreover it seems to be difficult to getter iron atoms in comparison with copper atoms.

UR - http://www.scopus.com/inward/record.url?scp=0026992469&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026992469&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1992.pd2-5

DO - 10.7567/ssdm.1992.pd2-5

M3 - Paper

AN - SCOPUS:0026992469

SP - 398

EP - 400

T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -