Proximity gettering of heavy metals by high energy ion implantation

T. Kuroi, Y. Kawasaki, S. Komori, K. Fukumoto, M. Inuishi, K. Tsukamoto, H. Shinyashiki, T. Shingyoji

研究成果: Paper査読

2 被引用数 (Scopus)

抄録

We studied the proximity gettering of heavy metals by secondary defects, using high energy, high dose ion implantation by means of intentionally contaminating samples with copper and iron. It was demonstrated that the secondary defects induced by high energy boron or silicon implantation can act as a gettering site of heavy metals and reduce the junction leakage current. The proximity gettering by silicon implantation is more effective than that by boron implantation. Moreover it seems to be difficult to getter iron atoms in comparison with copper atoms.

本文言語English
ページ398-400
ページ数3
DOI
出版ステータスPublished - 1992
外部発表はい
イベントExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
継続期間: 1992 8 261992 8 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

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