Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy

D. L. Mathine; S. M. Durbin; R. L. Gunshor; M. Kobayashi; D. R. Menke; Z. Pei; J. Gonsalves; N. Otsuka; Q. Fu; M. Hagerott; A. V. Nurmikko

doi:10.1063/1.101925

Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy

D. L. Mathine^*, S. M. Durbin, R. L. Gunshor, M. Kobayashi, D. R. Menke, Z. Pei, J. Gonsalves, N. Otsuka, Q. Fu, M. Hagerott, A. V. Nurmikko

^*この研究の対応する著者

研究成果: Article › 査読

16 被引用数 (Scopus)

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A series of pseudomorphic ZnTe/AlSb/GaSb epilayer/epilayer heterostructures, aimed at the realization of novel wide band-gap light-emitting devices, was grown by molecular beam epitaxy. The structures were evaluated by several techniques including transmission electron microscopy (TEM), x-ray rocking curves, photoluminescence (PL), and Raman spectroscopy. Reflection high-energy electron diffraction intensity oscillations were observed during nucleation of ZnTe. The presence of dislocation-free pseudomorphic structures was confirmed by TEM. The PL spectra of ZnTe epilayers showed dominant near-band-edge features composed of free and shallow impurity bound excitons.

本文言語	English
ページ（範囲）	268-270
ページ数	3
ジャーナル	Applied Physics Letters
巻	55
号	3
DOI	https://doi.org/10.1063/1.101925
出版ステータス	Published - 1989
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.101925

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title = "Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy",

abstract = "A series of pseudomorphic ZnTe/AlSb/GaSb epilayer/epilayer heterostructures, aimed at the realization of novel wide band-gap light-emitting devices, was grown by molecular beam epitaxy. The structures were evaluated by several techniques including transmission electron microscopy (TEM), x-ray rocking curves, photoluminescence (PL), and Raman spectroscopy. Reflection high-energy electron diffraction intensity oscillations were observed during nucleation of ZnTe. The presence of dislocation-free pseudomorphic structures was confirmed by TEM. The PL spectra of ZnTe epilayers showed dominant near-band-edge features composed of free and shallow impurity bound excitons.",

author = "Mathine, {D. L.} and Durbin, {S. M.} and Gunshor, {R. L.} and M. Kobayashi and Menke, {D. R.} and Z. Pei and J. Gonsalves and N. Otsuka and Q. Fu and M. Hagerott and Nurmikko, {A. V.}",

year = "1989",

doi = "10.1063/1.101925",

language = "English",

volume = "55",

pages = "268--270",

journal = "Applied Physics Letters",

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T1 - Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy

AU - Mathine, D. L.

AU - Durbin, S. M.

AU - Gunshor, R. L.

AU - Kobayashi, M.

AU - Menke, D. R.

AU - Pei, Z.

AU - Gonsalves, J.

AU - Otsuka, N.

AU - Fu, Q.

AU - Hagerott, M.

AU - Nurmikko, A. V.

PY - 1989

Y1 - 1989

N2 - A series of pseudomorphic ZnTe/AlSb/GaSb epilayer/epilayer heterostructures, aimed at the realization of novel wide band-gap light-emitting devices, was grown by molecular beam epitaxy. The structures were evaluated by several techniques including transmission electron microscopy (TEM), x-ray rocking curves, photoluminescence (PL), and Raman spectroscopy. Reflection high-energy electron diffraction intensity oscillations were observed during nucleation of ZnTe. The presence of dislocation-free pseudomorphic structures was confirmed by TEM. The PL spectra of ZnTe epilayers showed dominant near-band-edge features composed of free and shallow impurity bound excitons.

AB - A series of pseudomorphic ZnTe/AlSb/GaSb epilayer/epilayer heterostructures, aimed at the realization of novel wide band-gap light-emitting devices, was grown by molecular beam epitaxy. The structures were evaluated by several techniques including transmission electron microscopy (TEM), x-ray rocking curves, photoluminescence (PL), and Raman spectroscopy. Reflection high-energy electron diffraction intensity oscillations were observed during nucleation of ZnTe. The presence of dislocation-free pseudomorphic structures was confirmed by TEM. The PL spectra of ZnTe epilayers showed dominant near-band-edge features composed of free and shallow impurity bound excitons.

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DO - 10.1063/1.101925

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy

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