Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy

D. L. Mathine, S. M. Durbin, R. L. Gunshor, M. Kobayashi, D. R. Menke, Z. Pei, J. Gonsalves, N. Otsuka, Q. Fu, M. Hagerott, A. V. Nurmikko

研究成果: Article

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抜粋

A series of pseudomorphic ZnTe/AlSb/GaSb epilayer/epilayer heterostructures, aimed at the realization of novel wide band-gap light-emitting devices, was grown by molecular beam epitaxy. The structures were evaluated by several techniques including transmission electron microscopy (TEM), x-ray rocking curves, photoluminescence (PL), and Raman spectroscopy. Reflection high-energy electron diffraction intensity oscillations were observed during nucleation of ZnTe. The presence of dislocation-free pseudomorphic structures was confirmed by TEM. The PL spectra of ZnTe epilayers showed dominant near-band-edge features composed of free and shallow impurity bound excitons.

元の言語English
ページ(範囲)268-270
ページ数3
ジャーナルApplied Physics Letters
55
発行部数3
DOI
出版物ステータスPublished - 1989 12 1

    フィンガープリント

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Mathine, D. L., Durbin, S. M., Gunshor, R. L., Kobayashi, M., Menke, D. R., Pei, Z., Gonsalves, J., Otsuka, N., Fu, Q., Hagerott, M., & Nurmikko, A. V. (1989). Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy. Applied Physics Letters, 55(3), 268-270. https://doi.org/10.1063/1.101925