Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy

D. L. Mathine, S. M. Durbin, R. L. Gunshor, M. Kobayashi, D. R. Menke, Z. Pei, J. Gonsalves, N. Otsuka, Q. Fu, M. Hagerott, A. V. Nurmikko

研究成果: Article

16 引用 (Scopus)


A series of pseudomorphic ZnTe/AlSb/GaSb epilayer/epilayer heterostructures, aimed at the realization of novel wide band-gap light-emitting devices, was grown by molecular beam epitaxy. The structures were evaluated by several techniques including transmission electron microscopy (TEM), x-ray rocking curves, photoluminescence (PL), and Raman spectroscopy. Reflection high-energy electron diffraction intensity oscillations were observed during nucleation of ZnTe. The presence of dislocation-free pseudomorphic structures was confirmed by TEM. The PL spectra of ZnTe epilayers showed dominant near-band-edge features composed of free and shallow impurity bound excitons.

ジャーナルApplied Physics Letters
出版物ステータスPublished - 1989 12 1


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Mathine, D. L., Durbin, S. M., Gunshor, R. L., Kobayashi, M., Menke, D. R., Pei, Z., Gonsalves, J., Otsuka, N., Fu, Q., Hagerott, M., & Nurmikko, A. V. (1989). Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy. Applied Physics Letters, 55(3), 268-270.