Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction

D. Chiba, T. Kita, F. Matsukura, H. Ohno

研究成果: Article査読

7 被引用数 (Scopus)

抄録

We have investigated the pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn) AsGaAs (Ga,Mn) As magnetic tunnel junction. Critical current to induce magnetization switching shows a linear dependence on pulse width from 10 to 1000 μs. The magnetic-field dependence appears to indicate that the observed current-induced magnetization switching proceeds through metastable magnetization structures.

本文言語English
論文番号08G514
ジャーナルJournal of Applied Physics
99
8
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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