@article{a901defb299f45c3af009a366c4f0371,
title = "Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction",
abstract = "We have investigated the pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn) AsGaAs (Ga,Mn) As magnetic tunnel junction. Critical current to induce magnetization switching shows a linear dependence on pulse width from 10 to 1000 μs. The magnetic-field dependence appears to indicate that the observed current-induced magnetization switching proceeds through metastable magnetization structures.",
author = "D. Chiba and T. Kita and F. Matsukura and H. Ohno",
note = "Funding Information: This work was partly supported by the IT Program of Research Revolution 2002 (RR2002) from MEXT, a Grant-in-Aid from MEXT, and the 21st Century COE Program “System Construction of Global-Network Oriented Information Electronics” at Tohoku University.",
year = "2006",
doi = "10.1063/1.2170063",
language = "English",
volume = "99",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",
}