In-plane and out-of-plane oriented (11 2̄ 0) textured thin films are attractive for shear mode piezoelectric devices sensors, such as FBAR and SH-SAW devices. It is proposed that highly oriented (11 2̄0) AlN thin films can be fabricated ion beam sputter-deposition system with grazing incidence the substrate surface. Full-width-at-half-maximum (FWHM) values of the ∞-scan rocking curve and φ-scan profile curves of (11 22) X-ray diffraction poles were measured to be 4.6° and 23°, respectively. Shear-mode high-overtone acoustic resonator (HBAR) with (11 ̄0) textured AlN film excited pure-shear wave any longitudinal wave excitation. New device structure is because this film can be deposited on various substrates curved surfaces.
|ジャーナル||Proceedings - IEEE Ultrasonics Symposium|
|出版ステータス||Published - 2008 12月 1|
|イベント||2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China|
継続期間: 2008 11月 2 → 2008 11月 5
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