Pure-shear mode BAW resonator consisting of (112̄0) textured AlN films

Takahiko Yanagitani*, Masato Kiuch

*この研究の対応する著者

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

In-plane and out-of-plane oriented (11 2̄ 0) textured thin films are attractive for shear mode piezoelectric devices sensors, such as FBAR and SH-SAW devices. It is proposed that highly oriented (11 2̄0) AlN thin films can be fabricated ion beam sputter-deposition system with grazing incidence the substrate surface. Full-width-at-half-maximum (FWHM) values of the ∞-scan rocking curve and φ-scan profile curves of (11 22) X-ray diffraction poles were measured to be 4.6° and 23°, respectively. Shear-mode high-overtone acoustic resonator (HBAR) with (11 ̄0) textured AlN film excited pure-shear wave any longitudinal wave excitation. New device structure is because this film can be deposited on various substrates curved surfaces.

本文言語English
論文番号4803528
ページ(範囲)90-93
ページ数4
ジャーナルProceedings - IEEE Ultrasonics Symposium
DOI
出版ステータスPublished - 2008 12月 1
外部発表はい
イベント2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China
継続期間: 2008 11月 22008 11月 5

ASJC Scopus subject areas

  • 音響学および超音波学

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